LASER ASSISTED BONDING MACHINE – LAPLACE

Model: LaPlace

Category: Semiconductor Package Equipment

Booth No: M228

Characteristic

LaPlace
Using localized laser heating mechanism, temperature can be applied selectively in the interconnection areas of interest without heating up the entire substrate up to the reflow temperature to liquefy and reflow an interconnection of a few microns. With customized bond tool and laser technology, pick-and-place and assembly reflow heating are accomplished in single step at high accuracy <1µm. Localized heat ensures reliable bonding of large dies while the in-situ reflow supports ultra-small die assembly as small as 300µm.
LaPlace unique temperature control mechanism protects single chip or component from being over-heated and prevents substrate from warpage and repeating reflow circumstances.
Main Advantages as below：
• Unique patent technology of temperature control to in-situ monitor the temperature variation and adjust laser power in order to avoid the over-heating issue and prevent warpage effect during LCB (laser compression bonding) /LAB (laser assited bonding, laser reflow) process.
• Unique patent technology of laser optical design to attain 98% laser beam uniformity.
• For different kinds of IC component, it could do laser reflow on the same substrate at same time.
• Laser beam size up to 90×90mm (future roadmap: up to 120×120mm)
• Wafer level up to 12 inch wafer, Panel substrate size up to 600×600mm
• No thermal stress on the areas outside of bonding interface
• Prevent warpage effect
• High placement accuracy (<1µm)