PE ALD

 

Category: Panel-Level Packaging (PLP) Equipment / Material

Exhibitor: AREESYS

Booth No: M301

 

Characteristic

 

• System Configuration: Supports Thermal ALD, Plasma-Enhanced ALD (PEALD), and Ultra-High Vacuum ALD (UHV-ALD).
• Substrate Capability: Compatible with 100/150/200/300mm wafers or square substrates up to 500x500mm.
• Process Temperature: Temperature range from RT to 500°C.
• Precursor Delivery System: * Up to 6 precursor delivery lines (supporting both solid and liquid precursors).
o Canister heating system: Range from RT to 150°C.
• Reactant Lines: Supports 2 independent reactant gas lines.
• Carrier Gas: Standard N2 supply via high-precision Mass Flow Controllers (MFC).
• Plasma System: * Supports 4-channel plasma gas inputs (customizable).
o RF Power: 0–1000W.
• Pressure Monitoring: Dual corrosion-resistant Capacitance Manometers, range: 0.005 Torr to 1000 Torr.
• Base Pressure: Reaches 5x 10-3 to 10-7 Torr (configuration dependent).
• Vacuum System: Choice of standard Rotary Vane Pump or Turbo Molecular Pump (TMP).

 

Other Products

 

• 

  FOPLP RDL PVD 510*515

• 

  FOPLP TGV PVD 510*515

• 

  FOPLP Plasma Descum

• 

  PVD for technical study and research

• 

  ALD precursor and precursor recycle system

• 

  SWIR based inspection systems

• 

  Laser Processing Systems

• 

  PVD/ALD coating service

 

 

 

Back