Raman Metrology for Stress and Crystalline Quality Control in Semiconductor Materials

Model: Raman-3000

Category: Compound Semiconductor Equipment

Booth No: N220

Characteristic

In‑Line Metrology Solution for Stress Measurement, Strain Engineering, and Quality Assurance

The Raman‑based metrology platform delivers a fast, non‑invasive, and non‑destructive measurement solution optimized for advanced logic device manufacturing. It supports precise characterization of stress, strain, and crystalline quality in ultrathin SiGe films, GeOI substrates, and strain‑engineered Si/SiGe structures using a range of Raman analytical configurations.

Key Features

Completely non‑invasive and non‑destructive measurement technique
Engineered for high‑volume manufacturing and seamless factory automation
Robust platform compatible with wafers up to 300 mm
Supports both blanket wafers and full production wafers
Capable of measuring Si, SiGe, sSOI, GeOI and GaN materials
Automated calibration for spectrograph alignment and laser power stability
Flexible spectrograph and laser configurations to meet diverse application requirements